掺碲硒化镓晶体的光学性能.pdf

第4卷 第6期 中国光学 Vo1．4 No．6 2011年 l2月 ChineseOptics Dec．2011 文章编号 1674-2915(2011)06-0660-07 OpticalpropertiesofTe-dopedGaSecrystal GU Xin．an ，ZHU Wei．Zhen ，LUO Zhi—wei，ANDREEV YM ，LANSKIIGV ， SHAIDUKO A V2 IZAAK TI，SVETLICHNYIV A ，VAYTULEVICH EA ，ZUEV V V ． (1．NationalChiaoTungUniversity，Hsinchu30010，Taiwan，China； 2．InstituteofMonitoringofClimaticandEcologicalSystem船 RAS，Tomsk634055，Russia； 3．SiberianP ics—technicalInstituteofT$U，Tomsk634050，Russia； 4，ChangchunInstituteofOpticsFineMechanicsandPh，sics，ChineseAcademy ofSciences，Changchun130033，China) Abstract：8一GaSecrystalsaregrownwith thestoichiometricGaSeof0．05％ ，0．1％ ，0．5％ ，1％ and2％ (masspercent)TeandarecharacterizedbyGaSe：Te(0．O1％，0．07％，0．38％，0．67％ and2．07％(mass pereent))crystals．Thetransformationoftherigidlayerphononmodeswithdopingisstudiedforthefirst time．TheabsorptionpeakoftherigidmodeE，(2’centeredat～0．59THzisrisingupintheintensitytillreac— hingamaxima1valueonthefirststageofthedopingconcentrationlessthan0．38％ (masspercent)．This processcorrelateswellwiththeimprovementintheopticalproperty．Furtherdopingisresultinginthedecrease oftheintensitytillvanishingtheE 。‘’absorptionpeakat1％ (masspercent)Te．Simultaneouslywiththe E ‘absoprtionpeakdecreasing．theabsoprtionpeakoftherigidmodeE ‘centeredat1．78THzisrisingup intheintensity．ThetwoprocessescorrelateweUwiththedegradationintheopticalqualityofGaSe：Tecrys— ta1．ThedopinglevelthatresuhsinthehighestintensityoftheabsoprtionpeakoftherigidlayermodeE is proposedasacriterionintheidentificationoftheoptimalTe—dopinginGaSecrystalthatisconfimr edbyTHz generationviaopticalrectification． Keywords：GaSe；GaSe：Tecrystal；crysta