【精选】2SA1020-Y(TE6,F,M);中文规格书,Datasheet资料.pdf

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mm Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655 Absolute Maximum Ratings (Ta 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −2 A Base current IB −0.2 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ― Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C TOSHIBA 2-5J1