AON5810规格书.pdf

AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5810 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7.7 A (VGS = 4.5V) operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This RDS(ON) 18 mΩ (VGS = 4.5V) device is suitable for use as a uni-directional or bi- RDS(ON) 19 m (VGS = 4.0V) directional load switch, facilitated by its common-drain RDS(ON) 21 m (VGS = 3.1V) configuration. Standard Product AON5810 is Pb-free RDS(ON) 25 mΩ (VGS = 2.5V) (meets ROHS Sony 259 specifications). AON5810L RDS(ON) 40 mΩ (VGS = 1.8V) is a Green Product ordering option. AON5810 and ESD Rating: 2000V HBM AON5810L are electrically identical. D1 D2 DFN 2X5 S2 S2 S1 G2 S1 G1 D1/D2 G1 G2 S1 S1 G1 S2 S1 S2 S2 G2 Top View Bottom View Absolute Maximum Ratings T =25°C unless otherwise noted