纳米波导的研究StudyofNanoscaleWaveguide.ppt

纳米波导的研究;文献综述类论文;光通信迅猛发展;纳米集成光路;纳米波导 （尺寸限制在亚微米量级范围内） 有效连接各种纳米光子学器件或单元 保证良好、安全的光信号传输 执行集成体系内各种复杂的任务; ;纳米波导器件 ;;纳米波导的特性研究; 理论研究 ? 开发应用 ? 波导器件的制备技术 ;纳米波导的制备;纳米波导开发，应用的不足;关于纳米波导传输特性的猜想;截至波长的限制;对于传统波导，表面的非光滑因为其尺寸，对损耗的影响可以忽略。但对于纳米波导，要从两方面考虑。;边界非光滑纳米波导;部分参考文献;[37] Soref R A,Schmidtchen J, Petermann K. Large single-mode rib waveguides in GeSi-Si and Si2on-SiO2 [J ] . IEEE J. Quantum Elect ron. ,1991,27 (8) :1971-1974. [38] Powell O.Single-mode condition for silicon rib waveguides[J ] . J . Lightwave Technol. , 2002 , 20 (10) :1851-1855. [39] Chan S P,Png C E,Lim S T ,et al .Single-mode and polarization-independent silicon-on-insulator waveguides with small cross section [ J ] . IEEE J .Lightwave Technol. , 2005 , 23 (6) :2 103-2 110. [40] Fukazawa T,Sakai A,Baba T.H-tree-type optical clock signal dist ribution circuit using a Si photonic wire waveguide[J ] . Jpn. J . Appl. Phys. , 2002 , 41 (12B) :L1 461-1 463. [41] Barrios C A ,Almeida V R,Panepucci R, et al. Elect rooptic modulation of silicon-on-insulator submicrometer2size waveguide devices [ J ] . IEEE J .Lightwave Technol. , 2003 , 21 (10) :2 332-2 339. [42] FOSTER M A,TURNER A C,SHARP ING J E, et a l. Broad-band Optical Parametric Gain on a Silicon Photonic Chip [ J ]. Nature, 2006, 441 ( 22 ) : 960-963. [43]　D MITR IOS DIM ITROPOULOS, RAGHUNATHAN V,CLAPS R,et al.Phase-matching and Nonlinear Optical Processes in SiliconWaveguides [ J ]. Optics Express, 2004, 12 ( 1) : 149-160. [44] Canham L T.Silicon quantum wire array fabrication by electrochemical dissolution of wafer[ J ]. Appl Phys Lett, 1990, 57 (10) : 1046. [45] Proot J P,Delerue C,Allan G.Electronic structure and op tical p roperties of silicon crystallites: App lication to porous silicon[ J ]. Appl Phys Lett,1992, 61 (16) : 1948 . [46] LiBaoquan,GuNing.Nanobiological and Curatorial Material [M]. Beijing: Chemical Industry Press, 2003, 138 [47] OCarroll D, Lieberwirth I, Redmond G. Microcavity effects and optically pumped lasing in single conjugated polymer nan