微电子英语第二次课.pptxVIP

《微电子学专业英语》第二次课;Chapter. 1 Semiconductor Physics;Permittivity 介电常数 Covalent bonding 共价键 Conduction band 导带 Effective density of states 有效态密度 Intrinsic 本征的 Extrinsic 非本征的 Carrier 载流子 Bandgap 能带间隙 Mass action law 质量相互作用 Donor 施主 Acceptor 受主 Injection 注入 Impact ionization 碰撞电离 Scatter 散射 Drift 漂移 Mean free path 平均自由程 Mean free time 平均自由时间 Mobility 迁移率 Diffusivity piecewise 分段扩散率;P27：The mathematics of P-N junctions is greatly simplified for the case of the step junction, which has uniform p doping on one side of a sharp junction and uniform n doping on the other side. This model represents the alloyed junction quite well; the diffused junction, however, is actually graded (Nd-Na varies over a significant distance on either side of the junction). After the basic ideas of junction theory are explored for the step junction, we can make the appropriate corrections to extend the theory to the graded junction. In these discussions we shall assume one -dimensional current flow in samples of uniform cross-sectional area. ;P35：The diffusion current is composed of majority carrier electrons on the n side surmounting the potential energy barrier to diffused to the p side, and holes surmounting their barrier from p to n. There is a distribution of energies for electrons in the n-side Conduction band, and some electrons in the high-energy tail of the distribution have enough energy to diffuse from n to p at equilibrium in spite of the barrier. With forward Bias, however, the barrier is lowered to (V0-Vf), and many more electrons in the n-side Conduction band have sufficient energy to diffused from n to p quite large with forward bias.;surmount英 [s??ma?nt] 美 [s?r?ma?nt] vt.战胜，克服； 登上，攀登； 居于…之上； 顶上覆盖着 变形 过去式： surmounted 过去分词： surmounted 现在分词： surmoun