新型mos沟槽夹断型肖特基整流器的模拟研究微电子学与固体电子学专业论文.docx

低正曰但优于TM 一TM BS。给出了关于正向特性的物理解释。可以认为Double一RC~TMB STM BS与TM 一TM BS的一种折中。关键词:肖特基二极管，夹断效应，击穿，功率器件中图分类号:TN3ll，1，N313，TN314A bstractPO认，erSemiconductordevicesandPowerIntegratedCircuit(IC)，whiehare imPortan tbranehesofthewholesemieonduetorindustry，are widelyaPPliedtoindustrialandsoeialutilities.Powerreetifier15avitalco m P onen tofP ow ersem ieonductordeviees.O n the basisoftraditionalP一i一diode and PlanarSchottkyba币erdiode (SBD)，severaltyPesofnon一Planar SBD have been designed and fabrieated，am ong w hieh Treneh M O S Ba币erSehottkyreetifier(TM BS)and Graded doPing一TM BS (GD一TM BS)successfullyimProvedevicecharacteristicsbyusing.depletionregion inducedbyM O Sstructuretopinchofftheeondueting channel.Howeve几 the high field’Peak loeating atthe m esa botton nearthetreneh cornerlim itsthe im Provem entofb reakdo wn voltag e forboth TM B S and G D 一TM B S.Proeesssim ulation and devieesim ulation areealled in ajointIC一technology com Puteraideddesign(IC一TCAD)It15 oneofthefew teehnologiesthatareabletoshrinkthetimeand eost of IC develoPing.Besides，IC一TCA D 15 able to offer inform ation w hiehexPerimentseannottostrengthen thereseareh on IC Processand devieePhysies.Jn thisthesis，weuseProeesssim ulatorCsuPrem and deviee sim ulatorAPsyso fCrosslightIne.to5im ulate P]anarSBD ，TM BS，and G D 一TM BS，eharacteristicsofW hieh w e have alread yknow n.By eom Paring oursim ulated resultsw ith the known results，the aPPlieabilityandPreeision ofPhysie m odelsused in C suPrem and A Psysareverified.The eredibilityofthese5im ulators1550 established.AnimprovedStructureoverTM BS，TraPezoidM esa一TM BS(TM 一T M BS)15 proPosed.B y sim ulation severalParam etersare varied to study the irin fluenee on breakdow n v oltage.QualitativeexPlanationsaregiventotheserelationshiPs，aecordingtowhiehtheoPtimizedstrueture 15 given.D esigning rules are also given to seleetthe oPtim alvalue oftheseParam eters.Sim ulation resultsdem onstrate thatoPtim ized TM