WAT测量项目以及测试方法.ppt

上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation WAT 测量项目以及测试方法 TD/DTD/DD: Sutter Dai 2008/03/07 WAT Introduction WAT是什么 WAT系统介绍 3. WAT测试项目及方法 Wafer Acceptance Test（晶片允收测试） 半导体硅片在完成所有制程工艺后，针对硅片上的各种测试结构所进行的电性测试。 通过对WAT数据的分析，我们可以发现半导体制程工艺中的问题，帮助制程工艺进行调整。 WAT是什么? WAT系统介绍 Manual Prober Agilent 4284A CV Meter Agilent 4156A IV Meter Cascade Manual Prober WAT系统介绍 Agilent 4070 system TEL P8XL Agilent 4070 WAT系统介绍 HP 4070 Server Agilent 81110A Pulse Generator Agilent 4284A CV Meter Agilent E4411B Spectrum Analyzer Agilent 4070 内部结构 Agilent 3458A Digit Multimeter Wafer Auto-Prober Relay Metric Server EDA Server Test Key Probe card SMU PIN No Data Data Product information Test Program Control command DC tester CV Meter 4070 Server WAT 流程图 WAT测试项目 MOS device Field Device Junction Gate Oxide Resistor Bipolar Device Layout Rule Check 常见的几种器件结构 MOS Device Method of measurement Item name Vd=Vdd, Vs=Vg=0, sweep Vg from 0 to Vdd to get maximum Isub current Isub Vg=Vs=Vb=0, sweep Vd from 0V to Vdstop(3Vdd), measure Id, Bvd=Vd@Id=0.1uA/um Bvd Vd=1.1Vdd, Vg=Vs=Vb=0, measure Id, Ioff=Id/Width Ioff Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 2V,measure Id,Vt1=Vg@Id=0.1uA*Width/Length Vt1 Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 3V, use maximum slope method,Vt0=Xintercept –1/2*Vd Vt0 Vd=Vg=Vdd, Vs=Vb=0, measure Id, Ids=Id/Width Ids 以 NMOS 为例： 2. Field Device Method of measurement Item name Vg=1.1Vdd, sweep Vd from 0V to Vdstop(3Vdd),measure Id, Vpt=Vd@Id=10nA/um Vpt Vg=Vd=1.1Vdd, measure Id, Ileak=Id/Width Ileak Vd=1.1Vdd, sweep Vg from 0V to Vgstop(3Vdd),measure Id, Vt=Vg@Id=10nA/um Vt WAT Item Name(以Poly Nfield为例) : VtNfpS (field Vt) IleakNfpS VptNfpS (punchthrough Vt) 3. Junction WAT Item Name (以N+/PW junction为例) : CNj IleakNj BvNj Method of measurement Item name Vb=0, sweep Vg from 0V to Vgstop(3Vdd), measure Ig, Bv=Vg@Ig=100pA/um2 Bv Vg=1.1Vdd, measure Ig, Ileak=Ig/Area Ileak Vg=0V, Vb=GND, apply a 0.03V AC signal to measure