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作者：Chad R. Snyder, Member Frederick I. Mopsik 国籍：America 出处：IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT A Precision Capacitance Cell for Measurement of Thin Film Out-of-Plane Expansion–Part III: Conducting and Semiconducting Materials Abstract—This paper describes the construction, calibration, and use of a precision capacitance-based metrology for the measurement of the thermal and hygrothermal (swelling) expansion of thin films. It is demonstrated that with this version of our capacitance cell, materials ranging in electrical properties from insulators to conductors can be measured. The results of our measurements on p-type100 -oriented single crystal silicon are compared to the recommended standard reference values from the literature and are shown to be in excellent agreement. Index Terms—Capacitance cell, coefficient of thermal expansion (CTE), guarded electrode, high sensitivity displacement, inner layer dielectrics, polymers, thin films. I. INTRODUCTION THE coefficient of thermal expansion (CTE) is a key design parameter in many applications. It is used for estimating dimensional tolerances and thermal stress mismatches. The latter is of great importance to the electronics industry, where thermal stresses can lead to device failure. For accurate modeling of these systems, reliable values are needed for the CTE. Traditionally, displacement gauge techniques such as thermomechanical analysis (TMA) have been utilized for determining the CTE. However, standard test methods based on these techniques are limited to dimensions greater than 100 m [1-2]. This is problematic for materials which can be formed only as thin layers (such as coatings and certain inner layer dielectrics). Additionally, there is some question as to whether values obtained on larger samples (bulk material) are the same as those obtained for thin films, even when the effects of lateral constraints are included in the calculations . It has long been recognized that capacitance-based mea