gaasalxga1审审xas超晶格薄膜界面间扩散的研究-gaasalxga1 review of xas superlattice film interfacial diffusion.docx

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2018-06-04 发布于上海
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gaasalxga1审审xas超晶格薄膜界面间扩散的研究-gaasalxga1 review of xas superlattice film interfacial diffusion.docx

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gaasalxga1审审xas超晶格薄膜界面间扩散的研究-gaasalxga1 review of xas superlattice film interfacial diffusion

AbstractGaAs/Al0.37Ga0.63As superlatticehas beengrown on semi-insultedGaAs(001)substratewithoptimizedgrowthconditionsbymolecularbeamepitaxy(MBE),andthentreatedbyrapidthermalannealingathightemperature.Photoluminescence(PL)anddoublecrystalX-raydiffraction(DXRD) measurementswereperformedinordertodemonstratetheintersurficialdiffusioninsuperlattice,andtheintersurficialdiffusionlengthisalsocalculatedusingtheseresults.Furthermore,themodificationofinfrareddetectivitybytheintersurficialdiffusionisalsoinvestigated.Thispaperincludesthefollowingfour parts:Chapteroneintroducesthedevelopmentofinfraredphotodetectorsathomeandabroad,thegrowthtechniquesofsuperlatticematerialsandthebasictheory ofintersurficialdiffusionin superlattice.ChaptertwointroducestheprincipleofMBE,manufactureofsuperlattice,thetreatmenttothesuperlatticebyraipdthermalannealingathightemperatureand measuremethodsofsamples.Chapterthreeisresultsandanalysisofexperiment.superlatticematerialsof GaAs/Al0.37Ga0.63Ashavebeensuccessfullygrownonsemi-insultedGaAs(001) substratebymolecularbeamepitaxy,andthentreatedbyrapidthermalannealingat650℃、800℃、850℃for60s,respectively.PLspectraandDXRDrockingcurveofsamplesaremeasured.ThePLspectrashowthattheenergypeakresultingfromtherecombinationofelectronsonthefirstexcitedstateinGaAs quantumwellandholesonacceptorlevelinAlGaAsbarriershifttohighenergy afterrapidthermalannealingat800℃and850℃.TheDXRDrockingcurveshowthatthepeakintensitiesdecreasesdramaticallyafterannealingat800℃ and850℃.But,thesampletreatedat650℃haslittlevarietyincomparingwiththeas-grownsample.Theintersurficaldiffusionlengthisalsocalculatedusing theseresultsrespectively,andtheagreementofintersurficialdiffusionlength valuebetween PLandDXRD results is reasonable.Chapter four demonstrates modification of infrared detectivity by theintersurficialdiffusion.TheelectronicenergystructureinGaAs/Al0.37Ga0.63As-II-superlatticeiscalculatedbasedonthegeneralformalismoftheKronig-Penny model.Thecalculatedresultsshowthattheinitialinfrareddetect