gan基异质结材料应变研究及电学特性分析-strain study and electrical characteristics analysis of gan - based heterojunction materials.docx

ABSTRACT3. The film strain and the RSM （Reciprocal Space Map） strain gradient of theAlGaN/AlN super-lattice had been researched by the HRXRD and AFM et al, as well as the Al-component and the parameter of the super-lattice. These researches had revealled that the strain could be regulated, and the disorder could be filtered by the structure of the super-lattice, and the film quality could be improved with the increase of the number of the period of the AlGaN/AlN super-lattice.Keywords: GaN, HRXRD, Strain, Electrical properties, Mosaic structure.目录目 录第一章 绪论 .....................................................................................................................11.1 GaN 基材料外延膜的研究目的和意义11.2 纤锌矿 GaN 材料的基本特性21.2.1 GaN 材料晶体结构21.2.2 GaN 材料物理、化学及电学性质31.3 GaN 薄膜材料的技术发展31.3.1 GaN 薄膜的外延生长31.3.2 GaN 外延膜的衬底选取41.3.3 GaN 的掺杂41.4 GaN 材料结构应变、电学性能表征及其发展51.5 本论文的选题依据和研究内容.............................................................................61.5.1 本文的选题依据..............................................................................................61.5.2 本文的主要研究内容......................................................................................6第二章 实验平台构建及测试原理.................................................................................82.1 X 射线衍射仪介绍82.1.1 X 射线源82.1.2 X 射线的平行化及单色化82.1.3 X 射线衍射仪简介92.2 半导体外延单晶薄膜的高分辨 X 射线衍射表征方法及原理 102.2.1 实空间的布拉格衍射基本原理.....................................................................102.2.2 X 射线衍射几种光路模式 112.2.3 倒易空间的基本原理.....................................................................................122.2.4 倒易空间的扫描模式....................................................................................132.2.5 倒易空间图（Reciprocal Space Mapping） 142.2.6 衍射实验的基本方法....................................................................................14目录对称衍射（Symmetric Diffraction）14非对称衍射（Asymmetric Diffraction）15斜对称衍射（Skew Diffraction）152.2.7 镜面反射与面内掠入射...............................................................................