_1GHz BiCMOS RF FrontEnd IC一个1GHz的BiCMOS射频前端集成电路课件.ppt

RF Power Transistors For Mobile Applications ????? 2005-21326 ??? Background Operating Frequencies of Widely Used RF Electronics Most RF systems having real mass markets operate under 5 GHz. Cellular phones(GSM, CDMA) - 900MHz,1.8 and 1.9GHz Future 3G cellular phones (CDMA2000, Wideband CDMA) - 3GHz Advanced mobile communications - GPS(global positioning systems) - 1.8GHz- GPRS(general packet radio service) - 2.5GHz Wireless local area network (Bluetooth) - 2.4 GHz Collision avoidance radar used in automobiles - 77 GHz Microwave oven - 2.4 GHz RF Transistor Figures of Merit Cutoff Frequency fTFrequency at which the magnitude of the short circuit current gain h21 rolls off to 1 (0 dB). Max Frequency of Oscillation fmaxFrequency at which the unilateral power gain U rolls off to 1 (0 dB). fT and fmax can be extracted from h21 and U roll off at higher frequencies at a slope of –20 dB/dec. HBT (1) HBT (2) HEMT (1) HEMT (2) Power Amplifiers for Mobile Communication Systems (1) Cellular PA-Current PA : 95% with GaAs-New Comers : SiGe PA CMOS PA (skeptical)-SiGe BICMOS : better for integration better for cost (?) (Triquint claimed that GaAs has 15% less cost)-Issues : SoC or SoP Wireless LAN-Competitive technologies same with cellular PA-IEEE 802.11g(2.4GHz, 54Mbps) IEEE 802.11a(5GHz, 54Mbps)-67% of 177M PAs from GaAs in 2008 (Strategy Analytics) Cellular Base Stations-90% market with LDMOS-Competitive Technologies : GaN HFET(reliability), GaAs PHEMT Switch – mainly with GaAs PHEMT Power Amplifiers for Mobile Communication Systems (2) Trend of RF Transistors Important Trends? Continuous increase of the frequency limits, i.e. fT and fmax? Development of low- cost RF transistors for mass onsumer markets References RF and Microwave Power Amplifier and Transmitter Technologies- Frederick H. Raab, Peter Asbeck, Steve Cripps, Peter B. Kenington, Zoya B. Popovic, Nick Pothecary, Jo