磁控共溅射制备无氢碳化锗薄膜的结构和性能分析-analysis of structure and properties of hydrogen-free germanium carbide films prepared by magnetron co - sputtering.docx

-- PAGE VIII -摘 要最后，以实际应用为目的，设计了一种衬底自转-磁控溅射靶步进运动的 复合运动方式，实现了小尺寸磁控溅射靶材镀制大平面/半球面均匀薄膜，当 满足以下两个条件：(1)靶在所停留位置驻停时间与在该位置的面积成正比， (2)移动的步长不大于 5，那么用这种方式制备的薄膜膜厚相对偏差小于 5%， 能够满足实际应用要求。关键词： 无氢碳化锗；磁控共溅射；键合结构；力学和光电性质；大面积均匀沉积哈尔滨工业大学工学博士学位论文AbstractGreat attention has been given to the development of Group Ⅳ materials in the field of material science. The amorphous germanium carbide (a-Ge1?xCx:H), which have received considerable attention and experimental study, reflecting the high interest in these materials because of their exciting structural, optical, and electrical properties. In particular, the refractive index values of a-Ge1?xCx:H may be adjusted by x in a wide range, this excellent performance makes the a-Ge1-xCx:H films applicable for design and preparation of multilayer anti-reflection and protection coatings of IR windows. In addition, the band gap of a-Ge1-xCx:H films can be changed with x in a very wide range, this makes a-Ge1-xCx:H films good candidates in the design of electronic devices and photovoltaic cells. Therefore, a- Ge1-xCx:H is a new semiconducting material with great potential application. However, a great deal of hydrogen content from the precursors has been remained in the films. If the service temperature is raised up to 350oC, the properties of a- Ge1-xCx:H films will gradually deteriorate because of the broken C–H and Ge–H bonds in the films. Therefore, the amorphous non-hydrogenated germanium carbide (a-Ge1-xCx) films with a better stability are urgently demanded for the harsh applications. However, so far, there are very few reports on a-Ge1-xCx films. In this paper, the a-Ge1?xCx films were prepared using magnetron co-sputtering technique. The structural, mechanical, optical and electrical properties were focused on and discussed.The germanium target sputtering power and substrate temperature are important parameters affectting the film microstructure. As the germanium target power increases, the deposition rate and Ge content increase. The dep