本科论文（设计）Tri-Gate晶体管的工艺模拟及仿真.docVIP

Tri-Gate晶体管的工艺模拟及仿真 摘 要 本文的意义主要在于通过对Tri-Gate晶体管的学习和研究，分析晶体管结构和特点并进行相关的参数设计，器件工艺设计，器件模拟后，探索性的对Tri-Gate晶体管进行工艺模拟和特性仿真，最后能够设计并实现了其良好性能的Tri-Gate晶体管及其模拟。 关键词：Processing Simulation and Emulation of the Tri-Gate Transistor Abstract In recent years,In recent years,with the rapid development of the semiconductor industry as well as science and technology,semiconductor process geometries continue to shrink,the industry rumors that Moores Law will soon come to the end.However,in 2011 Intel announced Tri-Gate transistors,also known as 3D transistor,the successful development of makes greatly enhance the performance of the processor,but also allows the continuation of Moores Law to get certain number of years. Intels move?is the?milepost?type? greatest invention of the transistor?historys,and even can be said to be?reinvented the transistor.This?new technology will be?used in future?22nm?technology equipment,included the?mobile phone?to the?cloud?server?can use?this technology. Firstly,the traditional CMOS transistor as an example,introduces several current examples of more advanced transistor formation principles and structural features.Then drawbacks and limitations of these transistors to the new Tri-Gate transistors,and describes its features,and advantages of the other transistor.Also focused on the simulation of the electrical characteristics of the device model and correlation analysis combined with theoretical knowledge,the device structure can be further optimized on the basis of this,again simulated eventually come good performance Tri-Gate transistors. The significance of main this is that through the Tri-Gate transistor learning and research,after analyzing the structure and characteristics of the transistor parameters related to the design and the device process design,device modeling,exploratory for Tri-Gate transistor characteristics for process modeling and simulation Finally able to design and implement its good performance Tri-Gate transistor and analog. Ke