锆钛酸锶钡陶瓷电阻开关效应.pdf

Applied Physics 应用物理, 2017, 7(3), 63-70 Published Online March 2017 in Hans. /journal/app /10.12677/app.2017.73009 The Resistance Switching Effect in (Ba Sr )(Zr Ti )O Ceramics x 1−x 0.1 0.9 3 Zhi Zhu, Xingui Tang School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Guangdong th th st Received: Mar. 11 , 2017; accepted: Mar. 28 , 2017; published: Mar. 31 , 2017 Abstract (Ba Sr )(Zr Ti )O (x 0,0.2,0.4) ceramics were prepared by the traditional high temperature x 1−x 0.1 0.9 3 solid state reaction method and had a typical perovskite structure. The structure of the samples was influenced by Ba2+ doped. As shown by X-ray diffraction patterns, peaks (220) shift toward a low degree with the increasing of Ba2+ doped, implying that the lattice parameters increase with the increasing x. All of the samples showed a good resistive switching effect. The switching effect of the samples had a lot of specialties as good as thin film devices or single crystal devices, and the preparation process was simpler and had low cost. Oxygen vacancies were easy to be produced in the sintering process, and it might be the reason for inducing the resistive switching effect. We analyzed the impedance of the samples and calculated the activation energy (Ea). Ea values were between 1 to 2 eV, which confirmed what we suspected. The switching effect of (Ba Sr )(Zr Ti )O ceramics provides the possibility of new switching devices with the memory x 1−x 0.1 0.9 3 effect composed of ceramics. Keywords (Ba Sr )(Zr Ti