CuInS2纳米线阵列的合成通过解决方案转型的忍耐力self-template增强型光电化学性能：（Synthesis of CuInS2 nanowire arrays via solution transformation of Cu2S self-template for enhanced photoelectrochemical performance）.pdfVIP

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CuInS2纳米线阵列的合成通过解决方案转型的忍耐力self-template增强型光电化学性能：（Synthesis of CuInS2 nanowire arrays via solution transformation of Cu2S self-template for enhanced photoelectrochemical performance）.pdf

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Applied Catalysis B: Environmental 203 (2017) 715–724 Contents lists available at ScienceDirect Applied Catalysis B: Environmental j o u r na l h o m e p ag e: w w w. elsev /locate/apc atb Synthesis of CuInS2 nanowire arrays via solution transformation of Cu2S self-template for enhanced photoelectrochemical performance Ming Li, Renjie Zhao, Yanjie Su ∗ , Jing Hu, Zhi Yang, Yafei Zhang ∗ Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, PR China a r t i c l e i n f o a b s t r a c t Article history: A novel universal solution method has been proposed to prepare CuInS2 nanowire arrays (NWAs) Received 28 April 2016 using Cu S NWAs as the template. The screw-like CuInS nanowires are constructed by many stacked 2 2 Received in revised form 4 October 2016 nanoplates oriented along the direction of [221], and show diameters of 400–700 nm and lengths of Accepted 13 October 2016 several micrometres. Experimental results suggest that relatively higher In3+ concentration is beneﬁcial Available online 18 October 2016 to the insertion of In3+ into Cu S to form CuInS with conserving the nanowire morphology. A novel