物理学院 毕业设计模板（完整）.docVIP

五邑大学本科毕业设计 PAGE 2 PAGE I 摘 要（黑体小二）全文1.5万字左右 （小四）（300字左右）锁相回路跟我们生活息息相关，目前较先进的一类是可以用在机顶盒，数字电视，家庭网关，消费应用中的能带来多种效益的可程序化的锁相回路，锁相回路在集成电路应用方面功能越来越优化和广泛，………..。 可使用在各种类比及数位系统上，特别是电机的速度控制系统中, 能够实现稳态精度很高的转速控制，还有通讯架构中的频率再生器、无线通讯系统中的频率合成器、及讯号解调系统，随着超大集成电路制造技术不断地进步，目前的锁相回路大部分还是单晶片系统设计(system on a chip design) 。所以锁相回路已成为继运算放大器之后，又一个用途广泛的多功能集成电路。随着便携式电子大幅应用,功率消耗变为主要的考虑,本论文主要在提出低功率的锁相回路。 关键词 锁相回路；低功率；相位误差（3-5个） Abstract Flash memory cells require high voltage for program and erase operations. These high voltages are generated by charge pump circuits with low supply voltage. Therefore charge pumping circuit is one of the most important peripheral elements in flash memory. In recent years, portable electronic products to meet the popular demand of embedded flash become the key interest of researches and memory design house. Using standard low-voltage logic IC process, no high voltage devices are available. This creates a problem for the conventional charge pumping circuit, which allows high voltage across transistor terminals. This thesis provides one new charge pump circuit to solve this issue. It uses serial connected capacitors to control voltage difference between device terminals to less than 2Vdd. The new circuit fabricated in single well process can provide the high voltage for Flash memory operation and does not suffer from junction or gate oxide breakdowns. In order to avoid body effect, PMOS devices are adapted, which allows body, drain and gate to be tired together to overcome body effect. Higher output voltage and higher efficiency of the new circuit configuration are demonstrated. Optimization of the channel width, stage and output voltage for various Flash cell operation are presented. Key words charge pump circuits; embedded flash; gate oxide breakdown 目 录（黑体小二） TOC \o 1-4 \h \z \u HYPERLINK \l _Toc228276183 摘要 （小四黑体） PAGEREF _Toc228276183 \h I HYPERLINK \l _Toc228276184 Abstract (粗体：Times New Roman) PAGEREF _Toc228276184 \h II HYPERLINK \l _Toc228276185