（毕业设计论文）《PZT溶胶凝胶法低温制备与性能研究》.doc

摘 要 为了探索Pb(Zr0.20Ti0.80)O3（PZT）薄膜的结构和性能，本论文采用在Pt/SiO2/Si衬底上通过改变预处理温度、退火温度工艺条件制备了铁电薄膜XRD图谱显示，不同的工艺条件下可获得不同取向的薄膜。当厚度适中，预处理温度为300℃，退火温度为600℃时薄膜的质量较好，表现为（100）取向占优，[I(100)+I(200)]/I(111)较大。电滞回线分析表明，薄膜具有好的饱和度薄膜剩余极化为μC/cm2。这与XRD图谱分析结果一致。 通过实验我们达到了预期的目标,在低温条件下制备出取向性和铁电性能良好的PZT薄膜。 关键词：Pb(Zr0.20Ti0.80)O3；； ABSTRACT（Times New Roman三号，加粗） In order to study the low-temperature preparation of the structure and properties of Pb(Zr0.20Ti0.80)O3PZT) film, this paper using Sol-Gel method combined with layer-by-layer annealing process on the Pt(111)/SiO2/Si substrate. By changing the pretreatment temperature, annealing temperature process conditions and thickness we got different PZT ferroelectric thin films. Then XRD and ferroelectric properties of the films were tested. XRD patterns show that by different process conditions can get different orientation of the films. When the thickness is moderate, the pretreatment temperature is 300 °C, annealing temperature is 600 °C, the quality of the film is very good, in other words, the performance of the (100) orientation is dominant, [I (100) + I (200)] / I (111) is bigger. Electric hysteresis loop analysis shows that when the pretreatment temperature is 300 °C, annealing temperature is 600 °C and a total of 6 layers of PZT thin film has better saturation. In this case, the residual polarization of the film is 46.2 μC / cm2. Those results are consistent with the XRD patterns analysis. In summary, we achieved the desired objectives: got good orientation and ferroelectric properties of PZT thin films in low-temperature conditions. Key words： Pb(Zr0.20Ti0.80)O3 Thin Films Prepared at Low Temperature; Sol-el method; structure and ferroelectric properties of PZT 目 录 摘 要 I ABSTRACT（Times New Roman三号，加粗） II 1 前言 1 1.1 铁电薄膜材料概述(黑体四号，1.5倍行距，段前0.5行) 1 1.1.1 铁电性（黑体小四，1.5倍行距，段前0.5行） 1 1.1.2 铁电薄膜材料的种类情况（黑体小四，1.5倍行距，段前0.5行） 3 1.1.3 国内、外铁电薄膜材料的研究现状和发展趋势 3 1.2 PZT薄膜材料的概述 4 1.2.1 PZT薄膜材料的发展历程（黑体小四，1.5倍行距，段前0.5行） 4 1.2.2 PZT薄膜材料的结构 5 1.2.3 PZT薄膜