第12章--IC工艺几种IC工艺流程.pptVIP

第五单元：集成技术简介 第十二章：几种IC工艺流程 12.1. CMOS工艺 After studying the material in this chapter, you will be able to: Draw a diagram showing how a typical wafer flows in a sub-micron CMOS IC fab. 画出典型的流程图 Give an overview of the six major process areas and the sort/test area in the wafer fab. 对6种主要工艺的应用和测试有大概的认识 For each of the 14 CMOS manufacturing steps, describe its primary purpose. 描述CMOS工艺14个步骤的主要目的 Discuss the key process and equipment used in each CMOS manufacturing step. 能讨论每一步流程的关键工艺和设备 Major Fabrication Steps in MOS Process Flow CMOS Process Flow Overview of Areas in a Wafer Fab Diffusion Photolithography Etch Ion Implant Thin Films Polish Simplified Schematic of High-Temperature Furnace Photolithography Bay in a Sub-micron Wafer Fab Simplified Schematic of a Photolithography Processing Module Simplified Schematic of Dry Plasma Etcher Simplified Schematic of Ion Implanter Thin Film Metallization Bay Simplified Schematics of CVD Processing System Polish Bay in a Sub-micron Wafer Fab CMOS Manufacturing Steps Twin-well Implants 双阱注入 Shallow Trench Isolation 浅槽隔离 Gate Structure 多晶硅栅结构 Lightly Doped Drain Implants 轻掺杂漏注入 Sidewall Spacer 侧墙形成 Source/Drain Implants 源/漏注入 Contact Formation 接触孔形成 CMOS Manufacturing Steps Local Interconnect 局部互连 Interlayer Dielectric to Via-1 通孔1和金属塞1的形成 First Metal Layer 金属1互连 Second ILD to Via-2 通孔2和金属塞2的形成 Second Metal Layer to Via-3 金属2互连 Metal-3 to Pad Etch 金属3 ? 压点形成 Parametric Testing 测试 n-well Formation 1-1 p-well Formation 1-2 STI Trench Etch STI Oxide Fill STI Formation Poly Gate Structure Process n- LDD Implant p- LDD Implant Side Wall Spacer Formation n+ Source/Drain Implant p+ Source/Drain Implant Contact Formation LI Oxide Dielectric Formation LI Metal Formation LI Oxide as a Dielectric for Inlaid LI Metal (Damascene)大马士革工艺 Via-1 Formation（多层金属布线间的通孔） Plug-1 Formation SEM Micrographs of Polysilicon, Tungsten LI and Tungsten Plugs Metal-1 Interconnect Formation SEM Micrographs of First Metal Layer over Firs