《PZT溶胶凝胶法低温制备与性能研究》》-毕业论文.doc

PAGE 摘 要 为了探索低温制备的Pb(Zr0.20Ti0.80)O3（PZT）薄膜的结构和性能，本论文采用溶胶凝胶(Sol-Gel)法结合层层退火工艺在Pt(111)/SiO2/Si衬底上通过改变预处理温度、退火温度工艺条件制备了不同厚度的PZT铁电薄膜，并对其做了XRD和铁电性能测试。XRD图谱显示，不同的工艺条件下可获得不同取向的薄膜。当厚度适中，预处理温度为300℃，退火温度为600℃时薄膜的质量较好，表现为（100）取向占优，[I(100)+I(200)]/I(111)较大。电滞回线分析表明，300℃下预处理，600℃退火，共沉积6层的薄膜具有较好的饱和度。此时薄膜的剩余极化为46.2μC/cm2。这与XRD图谱分析结果一致。 通过实验我们达到了预期的目标,在低温条件下制备出取向性和铁电性能良好的PZT薄膜。 关键词：Pb(Zr0.20Ti0.80)O3薄膜低温制备； Sol-Gel法； PZT结构与铁电性能 ABSTRACT（Times New Roman三号，加粗） In order to study the low-temperature preparation of the structure and properties of Pb(Zr0.20Ti0.80)O3 (PZT) film, this paper using Sol-Gel method combined with layer-by-layer annealing process on the Pt(111)/SiO2/Si substrate. By changing the pretreatment temperature, annealing temperature process conditions and thickness we got different PZT ferroelectric thin films. Then XRD and ferroelectric properties of the films were tested. XRD patterns show that by different process conditions can get different orientation of the films. When the thickness is moderate, the pretreatment temperature is 300 °C, annealing temperature is 600 °C, the quality of the film is very good, in other words, the performance of the (100) orientation is dominant, [I (100) + I (200)] / I (111) is bigger. Electric hysteresis loop analysis shows that when the pretreatment temperature is 300 °C, annealing temperature is 600 °C and a total of 6 layers of PZT thin film has better saturation. In this case, the residual polarization of the film is 46.2 μC / cm2. Those results are consistent with the XRD patterns analysis. In summary, we achieved the desired objectives: got good orientation and ferroelectric properties of PZT thin films in low-temperature conditions. Key words： Pb(Zr0.20Ti0.80)O3 Thin Films Prepared at Low Temperature; Sol-Gel method; structure and ferroelectric properties of PZT 目 录 TOC \o 1-3 \h \z \u HYPERLINK \l _Toc326262632 摘 要 PAGEREF _Toc326262632 \h I HYPERLINK \l _Toc326262633 ABSTRACT（Times New Roman三号，加粗） PAGER