《化学抛光技术在晶体材料中的应用研究》-毕业论文.doc

苏州科技学院本科生毕业设计 PAGE PAGE 27 化学抛光技术在晶体材料中的应用研究 摘 要 化学抛光技术是目前唯一能获得全局平面化效果的平整化技术。本文主要研究石榴石晶体的化学抛光工艺。进行不同化学抛光液抛光后效果对比实验，室温与高温抛光后效果对比实验，不同抛光时间后的效果对比实验。将抛光后的晶片利用原子力显微镜等仪器进行表面形貌的测试。经过比较分析得到：在室温下，H2SO4、H2O2体积比为1∶1的溶液为化学抛光液，抛光1小时，此工艺为石榴石晶片合适的化学抛光工艺。抛光后晶片表面在10×10μm2范围内平均粗糙度达到0.3536nm，与传统商用硅片抛光后效果相当。此抛光工艺的获得，解决了石榴石晶体在应用于高能激光器时由于表面粗糙影响输出功率的问题。 关键词 化学抛光；Yb:YAG晶体；原子力显微镜；平均粗糙度 Study on chemical polishing of crystals material Abstract Chemical polishing is the only technology to achieve the overall plane currently. In this paper, chemical polishing of the garnet crystal is studied. Comparing the effect of different chemical polishing solution on polishing the sample, the sample polishing at room temperature and high temperature, different polishing time on the samples polished. Using atomic force microscopy and other equipment to test the surface morphology of the samples polished. After comparison and analysis, we know that at room temperature, using solution of H2SO4、H2O2 volume ratio of 1∶1 as a chemical polishing solution and polishing one hour, are suitable chemical polishing technology of garnet wafer. The surface average roughness of the garnet wafer polished reached 0.3536nm in the range of 10 × 10μm2, almost the same roughness as the silicon wafer polished which is used in traditional industry. As we know, surface roughness of the garnet crystal used in high-energy laser affects the output power. The polishing technology we talked about solves the problem. Keywords chemical polishing; Yb:YAG crystal ; AFM; the average roughness 目 录 TOC \o 1-3 \h \z \u HYPERLINK \l _Toc232988505 1 绪论 PAGEREF _Toc232988505 \h 1 HYPERLINK \l _Toc232988506 1.1 化学抛光的应用背景 PAGEREF _Toc232988506 \h 1 HYPERLINK \l _Toc232988508 1.2 几种常见的化学机械抛光工艺 PAGEREF _Toc232988508 \h 3 HYPERLINK \l _Toc232988509 1.3 应用化学抛光技术的实例 PAGEREF _Toc232988509 \h 4 HYPERLINK \l _Toc232988510 1.4 石榴石基质特性及典型石榴石晶体Yb:YAG晶体 PAGEREF _Toc232988510 \h 5 HYPERLINK \l _Toc232988511 2 实验方法 PAGEREF _Toc232988511