IGCT应用技术研究-电工理论与新技术专业毕业论文.docx

ABSTRACT ABSTRACT The Integrated Gate Commutated Thyristor IGCT is a new power electronic device． It is integrated with the GCT chip and the gate driver by low inductance．It has advantages both in stable turn-off capability of transistor and low turn·011 loss of SCR． It has characteristics of high current，high voltage,high switching frequency,high reliability,compact conformation and low loss．It costs low，and is hi曲面eld，SO it has a wild application in future．Therefore,it is necessary tO do some research for IGCTs，and to design a device to do experiments for IGCTs in high-voltage and high-current． In this paper,it analyses a single IGCT device．It presents the IGCTs struc-：tBre, working principles，key technologies，the comparison of IGCT,GTO and IGBT,IGCTs’ Characteristic parameters and gate driver circuit prindples． Then from a single IGCT device to the entire IGCT unit module，the paper presents the functions of the IGCT units damp protection principle,the stray inductances influence for device’S turn-off over-voltage,and the anti—parallel diode’S influence to turn—offover-voltage of the IGCT power unit． Based in detail analysises of the IGCr unit,we designed the IGCT power unit test bench．The test bench is made of the power control counter and device test counter．In designing process，we mainly considered about test security and the diversity of testing capabilities．111e paper presents the simulations，circuit principle,functions，of the test bench， Finally we made experiments 011 test bench and presents numbers of experiment results．The waveforms of results are presented tO confirm the rationality and the feasibility of the test bench．Therefore．it lays a foundation for fi】rthef study of IGCl’S． KEYWORDS：IGCT；power unit；test bench；switching test CIASSNO  学位论文版权使用授权书 本学位论文作者完全了解北京交通大学有关保留、使用学位论文的规定。特 授权北京交通大学可以将学位论文的全部或部分内容编入有关数据库进行检索， 并采用影印、缩印或扫描等复制手段保存、汇编以供查阅和借阅。同意学校向国 家有关部门或机构送交论文的复印件和磁盘。 (必威体育官网网址的学位论文在解密后适用本授权说明) 学位论文作者签名： 导师签名： 签字日期： 年 月 日 签字日期： 年 月 日  北京交通大学硕士学位论文 独创