GaNMOCV反应室的CFD数值模拟计算.docx

西安电子科技大学 硕士学位论文 GaN--MOCVD反应室的CFD数值模拟计算 姓名：刘红才 申请学位级别：硕士 专业：材料物理与化学 指导教师：李培咸 201203 摘要摘要 摘要 摘要 金属有机物化学气相沉积(MOCVD)是当今最先进、最主要的制备半导体材 料和器件的技术，特别是在制备GaN基LED方面具有广泛的应用前景和市场需求。 MOCVD设备的反应室是核心部件，反应室设计的优劣直接关系到其所生长薄膜 的质量。利用计算机对反应室进行建模仿真研究，是研究反应室不可或缺的方法。 本文采用FLUENT软件对MOCVD设备反应室进行了二维数学模型分析与计算。 文中分析了设备的工艺参数和反应室几何结构对反应室内流场和温度场的影 响。研究发现，在一定范围内，增大入口速度、降低操作压强、设定适宜的基座 温度、保持合理的基座转速、增大入口面积、减小入口与基座的间距等，不仅可 以有效地抑制热浮力效应，同时也使基座表面的流动速度增大，从而使反应室内 的流场和温度场均匀分布；并对MOCVD设备的入口进气方式进行改进，以形成 稳定均匀的流场和温度场。 关键词：氮化镓啪C印数值仿真 ABSTRACTABSTRACT ABSTRACT ABSTRACT Metal-organic chemical vapor deposition(MOCVD)is the most advancd and important technology in the preparation of semiconductor materials and devices， especially in the preparation of GaN—based LED has a wide range of applications and market demands．However,the reactor chamber is the core component of the MOCVD equipment，whether the design of the reactor is better or not is directly related to the film quality grown by the MOCVD．It is all indispensable method to model and simulate the reactor by using the computer．In this dissertation,the MOCVD reactor chamber is simulated and analyzed in the 2D numerical modeling with the help of FLUENT code． How the different geometric and process parameters affect the flow field and the temperature field in the MOCVD reactor is studied in this dissertation．Under a wide range of geometric and process parameters，such as varying total flow rate of gas inlet, chamber pressure，growth temperature,susceptor rotation,inflow area,distance between the inflow and the susceptor,it iS finally obtained the favorable conditions of the uniform distributiongs of velocity and temperature profiles inside the reactor,in which the thermal buoyancy forces are effectively controlled and the flow velocity above susceptor is further increased．皿e inflow pattern of the MOCVD reactor is improved in order to provide steadY and uniforill flow field and temperature field． Keywords：GaN MOCVD CFD numerical simulation 第一章绪论第一章绪论 第一章绪论 第一章绪论 1．1引言 近