GDCSZN超晶格电解质薄膜的制备及其电学性能.docx

内蒙古大字坝士字位论又 层薄膜之间结合性比较紧密，且其薄膜的外延生长状况优良，每层膜之间的界 面清楚，在(GDC／YSZ)N中并没有元素扩散。X射线衍射图谱(XRD)与高分 辨率透射图(HR．TEM)研究结果表明，(GDC／YSZ)N超晶格电解质薄膜的结构 与运输特性都比较优异。从电化学性能测试的研究与分析结果可以看出，当 (GDC／YSZ)N超晶格电解质薄膜的层数增多时，其电导率也相应得以提高。 (GDC／YSZ)N超晶格薄膜与YSZ及GDC等电解质氧离子传导性相比都要高很 多。 关键词：SOFC；PLD；(GDC／YSZ)N超晶格；电导率 万方数据  内蒙古大学硕士学位论文 PREPAR ATl0N AND ELECTR．ICAL CHARACTERIZATION OF THE(GDC／YSZ)N SUPERLATTICE ELECTROLYTE ABSTRACT In this thesis，GDC／YSZ(Ce0．9Gdo．102．6／Zr02 8 mol％Y203)electrolyte bilayer films were deposited by pulsed laser deposition(PLD)on A1203 single wafer． By scanning electron microscopy morphology(SEM)to observe the microstructure of thin films，it can be seen that with the increase of annealing temperature，the film became more uniform，the incorporation between the sub strate and thin film became more closely，the density of thin film also became better，the epitaxial growth of thin films was also optimized．By X—ray diffraction(XRD)，it can be seen that with the increase of annealing temperature，the crystallinity of film was optimized，the films were preferential growth along(1 1 1)direction，(1 1 1)diffraction peak’S intensity gradually improved，had a more pronounced preferential growth orientation． Therefore，through the analysis of the above results，we can know that when the annealing temperature is 850。C，the film had better epitaxial growth．The conductivity of GDC／YSZ electrolyte bilayer films was higher than the conductivity of single—layer YSZ film，single—layer GDC thin film and bulk YSZ． Using pulsed laser deposition(PLD)fabricated(GDC／YSZ)N(Ce0．9Gdo．1 02一 dZr02．8 mol％Y203、)superlattice electrolyte thin film on A1203 single wafer．By adjusting the number of heterointerfaces，but the total thickness was controlled to a iii 万方数据  内蒙古大学硕士学位论文 constant value(300 nm)，then fabricated five different(GDC／YSZ)N superlattice electrolyte film samples(N 2 4,6，1 0，20，30)．A1203 has the very high chemical stability,very low electronic conductivity and ionic conductivity。As a result， substrate of the A1