InP基HBT频率性能分析、数提取及光接收前端的电路设计-电磁场与微波技术专业毕业论文.docx

北京邮电人学硕士研究生学位论文 北京邮电人学硕士研究生学位论文 摘要 PIN+HBT光接收机前端跨阻放大电路，使用电路仿真软件对前端电路 进行了初步的仿真分析，为单片集成光接收机前端的设计与制备提供 支持。 4．采用2肛m工艺，制备了单管的InP基HBT，其直流特性和高频 特性的测试结果为：开启电压0。43V，击穿电压大于3￥，电流增益截 止频率异为28GHz。 关键词：光电集成电路(OEIC) 异质结双极晶体管(船T)光接收 机前端频率特性 小信号模型工业模型 参数提取 Ill 北京郏电大学颈士研究生学谴论文FREQUENCY 北京郏电大学颈士研究生学谴论文 FREQUENCY PERFORMANCE ANAI YSIS AND B划艮蜒蛾ETERS EXTRACTlON ON l致P．BASED HBT AND THE CIRCUIT DESIGN OF PHOTORECEIVER’S FRONT END The research works described in this paper were supported by the grants from many research projects，including Doctoral sweets Research Grants of Ministry of Education,“Monolithic OEIC photoreceiver modules based on RCE photodetectors and HBT’(20020013010)and National Basic Research Program of China,“Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Hbcrs with Structure and Technology Innovations for Future Advanced Optical Communications”(2003CB314900)． Nowadays,optoelectronic devices face the turning point that optoelectronic integrated circuits(OElCs)ale rapidly replacing discrete devices，because the former offer the advantages of smaller dimension,lower parasiticslower cost,better performance and higher reliability compared to the latter．OEICs have already become extremely attractive domain as the fundamental research subject in the area of optimal communications and optoelectronics． IllP．based HBT have many attractions in the field of Hber-Optic communication， and they Call integrate with photodetectors with shared epitaxial layers on a single substrate，SO the research on lnP—based HBT has bright future and attracts much attention in the world． This thesis focused OU physical configuration model，frequency performance analysis，parameters extraction,experimental fabrication of InP-based HBT,and PIN+HBT front-end circuit design。In this paper,the author has obtained the results as the following： 1．Proceed from physical characteristics of device，the small·signal equivalent drcuit model of HBT had been constructed，The expre