GaN薄膜在金属衬底Ti Mo上的低温ECRPEMOCVD生长其性能影响机制研究.docx

大连理工大学硕士学位论文GaN薄膜的最佳沉积温度为570℃，最佳TMGa流量为1．6sccm，在最佳条件下制备的 大连理工大学硕士学位论文 GaN薄膜的最佳沉积温度为570℃，最佳TMGa流量为1．6sccm，在最佳条件下制备的 GaN薄膜沿c轴择优生长，晶体质量较高，表面较为致密平整，具有较强的光致发光， GaN薄膜与Mo衬底之间显示肖特基接触特性。 关键词：氮化镓；ECR-PEMOCVD；金属衬底Ti、Mo 万方数据 大连理工大学硕士学位论文Low—temperature 大连理工大学硕士学位论文 Low—temperature ECR-PEMOCVD Growth of GaN Films on Metal Ti and Mo Substrates and Its Properties Influencing Mechanism Abstract The GaN material system is gathering great interest because of its potential application to photonic and electronic devices，as well as high-voltage，high-power devices，due to its wide band gap(3．3 9eV)and other excellent properties such as high saturated drift velocity．high breakdown voltage．GaN films are manufactured in factory for application as blue and green light emitting diodes(LED)，blue laser diodes(LD)，high power diodes and SO on．GaN-visible LED have rapid advancements to beceome a potential viable altematives to traditional lighting fixture because the achievement of the white·-light sources based on InGaN／GaN multiple-·quantum··well blue LED chip with phosphor coating or a combination of red-，green-and blue-emitting LED chips． As is well known that the performance of GaN-based devices is highly dependent on the substrate materials．GaN are fabricated on a single crystal sapphire substrate，SiC substrate or Si substrate，generally．But for these substrates，there are some defects in lattice-match，conductivity and SO on．Large mismatch in lattice constants between GaN film and the sapphire substrate iS a cumbersome problem．In addition。the poor conductivity in electronic and heat of sapphire substrate is a big problem．For SiC，high cost limits its commercialization．Mismatch in thermal expansion coefficients between GaN film and Si substrate always cause GaN film chapped． Recently，there are researchers want to prepare GaN on metal substrates directly for metals’good properties such as good conductivity，low cost and reflection of light．These properties may improve the heat dispersion and the li