AT41485中文资料.pdfVIP

元器件交易网 Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features diate sized transistor with imped- 85 Plastic Package • Low Noise Figure: ances that are easy to match for 1.4 dB Typical at 1.0 GHz low noise and moderate power 1.7 dB Typical at 2.0 GHz applications. Applications include use in wireless systems as an LNA, • High Associated Gain: gain stage, buffer, oscillator, and 18.5 dB Typical at 1.0 GHz mixer. An optimum noise match 13.5 dB Typical at 2.0 GHz near 50 Ω at 900 MHz, makes this • High Gain-Bandwidth device easy to use as a low noise Product: 8.0 GHz Typical fT amplifier. Description The AT-41485 bipolar transistor is Agilent’s AT-41485 is a general fabricated using Agilent’s 10 GHz purpose NPN bipolar transistor fT Self-Aligned-Transistor (SAT) that offers excellent high fre- process. The die is nitride passi- quency performance. The AT- vated for surface protection. 41485 is housed in a low cost Excellent device uniformity, .085 diameter plastic package. performance and reliability are The 4 micron emitter-to-emitter produced by the use of ion- pitch enables this transistor to be implantation, self-alignment