IR2181上下半桥驱动.pdf

Preliminary Data Sheet No. PD60030 rev.O IR2213(S) (PbF) HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +1200V VOFFSET 1200V max. Tolerant to negative transient voltage dV/dt immune IO+/- 1.7A / 2A • Gate drive supply range from 12 to 20V • Undervoltage lockout for both channels VOUT 12 - 20V • 3.3V logic compatible Separate logic supply range from 3.3V to 20V ton/off (typ.) 280 225 ns Logic and power ground ±5V offset • CMOS Schmitt-triggered inputs with pull-down Delay Matching 30 ns • Cycle by cycle edge-triggered shutdown logic • Matched propagation delay for both channels • Outputs in phase with inputs Packages • Also available LEAD-FREE (PbF) Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable 16-Lead SOIC ruggedized monolithic construction. Logic inputs are 14-Lead PDIP (wide body) compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 volts. Typical Connection