太阳电池用玻璃衬底上多晶硅薄膜的结构及电学特性研究【毕业论文】.doc

- PAGE I - 本科毕业设计 （20 届） 太阳电池用玻璃衬底上多晶硅薄膜的结构及电学特性研究 所在学院 专业班级 电子信息科学与技术 学生姓名 学号 指导教师 职称 完成日期 年 月 PAGE I 摘　要 【摘要】多晶硅薄膜太阳能电池同时具有单晶材料的高迁移率，以及非晶硅材料的大面积低成本制备等优点，是解决太阳能高效利用的一种有效途径。本文分别在玻璃衬底、AZO衬底以及绒面AZO衬底上，采用磁控溅射的方法制备a-Si薄膜，并将它们经过快速热退火晶化，制备得到不同衬底结构上的多晶硅薄膜。研究通过X射线衍射仪观察和表征薄膜的晶化行为，分析在不同退火温度下，不同衬底上薄膜的晶化行为，并用透射电镜观察多晶硅薄膜的微观形貌。结果表明以AZO薄膜为衬底材料，在300oC下制备出的薄膜经过退火后，能够得到晶化率较高的多晶硅薄膜。并得到溅射温度、时间对制备得到的薄膜特性，如薄膜生长速率、表面粗糙度及薄膜的折射率等的影响。 【关键词】磁控溅射；衬底材料；晶化行为；薄膜特性。  Abstract 【ABSTRACT】Polycrystalline silicon thin film solar cells have advantages of high mobility as single crystal materials, large area and low-cost depositon as amorphous silicon films, which is regarded as an efficient way to achieve an fully use of solar energy. In this paper, a-Si thin-films were prepared by magnetron sputtering technology on the substrates of glass, AZO and textured AZO, respectively. Polycrystalline Si thin-films on the different substrate were obtained by rapid annealing. X-ray diffraction analysis was applied for the characterizaiton of the thin film crystallization at different annealing temperatures and substates. The mophology of obtained films were characterized using transmission electron microscopy. It is concluded that the crystallization ratio was higher for the thin films prepared on the AZO substrate at 300 oC after annealing. The influence of the sputtering temperature and time on the film properties such as growth rate, roughness and refractive index were summarized. 【KEYWORDS】magnetron sputtering；substrate material；crystallization；film characteriztion。 . 目　录 TOC \o 1-3 \h \u HYPERLINK \l _Toc23094 摘　要 PAGEREF _Toc23094 II HYPERLINK \l _Toc28955 Abstract PAGEREF _Toc28955 III HYPERLINK \l _Toc30112 目　录 PAGEREF _Toc30112 IV HYPERLINK \l _Toc21025 1 绪论 PAGEREF _Toc21025 1 HYPERLINK \l _Toc28002 1.1 太阳电池应用、种类 PAGEREF _Toc28002 1 HYPERLINK \l _Toc31875 1.1.1 晶体硅太阳电池 PAGERE