光学薄膜生长过程的缺陷形成机理研究-光学工程专业论文.docxVIP

ABSTRACT With the rapid development of science and technology, research and development of films are widely used in optics, machinery, electronics, chemicals, printing, medical, aerospace and other fields. A variety of new functional devices proposes a severe challenge on the film preparation technology. But the various surface defects met in film production process have serious impact on its function, and increase greatly the film producing cost. In this work, we introduce the film crack defect met in the preparation of an infrared film product, by studying the forming mechanism of film stress, and making the optimization experiment from the material, temperature, transition layer and other aspects, finally found the suitable material and process parameters, and solve the problem of film crack, while the spectrum meets customer requirements, making infrared film products to volume production. Meanwhile, we have studied in the forming mechanism of common macroscopic nodule inclusions defect, and focus on improving nodule defect caused by splattering dot, the suitable handling methods and pre-melting parameters are found by making comparative experiment on selecting material, handling, pre-melting and optimizing process parameters, greatly reducing the splattering dot proportion, and the product yield can be increased dramatically. Finally, we introduce the massive defect and strip defect, massive defect is confirmed as a kind of hole defect (film empty hole), which is controlled mainly in substrate cleaning and environment. Strip defect has a strange shape (defined as P scratch), investigating the correlation between P scratch and glass substrate/ion source/halogen lamp/coating material and so on, test and analysis the shape and component of P scratch by FE SEM, and find the forming reason of P scratch. By purifying SiO2 material, fully pre-melting material, optimizing deposition parameters and so on, P scratches defect decreased significantly, which change the view