0.13微米SOI+CMOS商用工艺开发.pdf

目 录 摘要································································1 Abstract····························································3 弓I言································································6 第一章SOI技术工艺基础和器件特性······························一一8 第1．1节SOI衬底硅片加工技术和本课题采用的SOI衬底硅片类型·····8 第1．2节在S01工艺中常用的关键工艺和本课题采用的工艺··········．13 第1．3节SOI晶体管体引出方式··································．16 第1．4节SOI器件特性··········································19 第1．5节SOI器件优点···········································23 第二章0．13微米S01CMOS工艺开发·································．26 第2．1节浅槽隔离工艺模块······································27 第2．2节栅工艺模块············································36 第2．3节源漏工程··············································39 第2．4节互连工艺·············································．41 第三章0．13微米SOICMOS工艺器件特性·····························43 第3．1节体引出器件的形式与面积····························一·43 第3．2节器件的电气参数········································44 第3．3节器件的泄漏电流········································51 第3．4节自加热效应········································．．“57 第3．5节浮体器件的线性区KINK效应·························一·40 第四章结论···································一一一··．．一．．一一一66 参考文献·······························一一一”一一．．一一一一一一一68 致{射····································一·一”一一．．一．．一一一一一69 U 万方数据 摘 要 SOI工艺和器件，始终被业界密切关注和研究。本课题在一条大规模商用集 成电路生产线上开发0．13微米SOI CMOS工艺技术，这篇论文阐述了该工程项目 的主要内容，主要解决了开发O．13微米SOI CMOS工艺技术、该工艺从无到有这 一工程问题。 本课题以体硅工艺为开发基础。本论文重点针对SOI工艺和体硅工艺的差 别，进行讨论。对0．13微米SOI工艺开发中遇到的顶层硅膜厚度选择和浅槽隔 离(STI，ShallowTrench Isolation)深度的搭配、有源区硅膜翘