硅片清洗原理与改进方法学士毕业论文.doc

PAGE PAGE II 毕业设计（论文） 题 目 硅片清洗原理与改进方法 所 属 系 太阳能科学与工程系 专 业 光伏材料加工与应用技术 硅片清洗原理与改进方法 摘 要 随着大规模集成电路的发展, 集成度的不断提高, 线宽的不断减小, 对硅片的质量要求也越来越高, 特别是对硅抛光片的表面质量要求越来越严。 在硅晶体管和集成电路生产中, 几乎每道工序都有硅片清洗的问题, 硅片清洗的好坏对器件性能有严重的影响, 处理不当, 可能使全部硅片报废, 做不出管子来, 或者制造出来的器件性能低劣, 稳定性和可靠性很差。因此弄清楚硅片清洗的方法和原理, 不管是对于从事硅片加工的人, 还是对于从事半导体器件生产的人来说都有着重要的意义。 　 本文对硅片清洗的基本理论、常用工艺方法和技术进行了详细的论述, 同时对一些常用的清洗方案进行了浅析, 并对硅片清洗的重要性和发展前景作了简单论述。最后介绍了清洗工艺的必威体育精装版进展。 关键词：硅片； 清洗； 湿法化学清洗； 干法清洗技术； 必威体育精装版进展 Silicon wafer cleaning principle and improving methods Abstract Along with the development of large scale integrated circuit, the constant improvement of the level of integration, the line width of constantly decrease, the quality requirements of the silicon wafer of more and more is also high, especially in silicon PaoGuangPian surface quality requirements more and more severe. In silicon transistors and integrated circuit production, almost every process is the problem of silicon cleaning, the stand or fall of silicon cleaning device performance to have a serious impact, processes improper, may make all silicon scrap, cant make the tube to, or made the inferior device performance, stability and reliability is poor. So clear of the silicon cleaning method and principle, whether it be for wafer processing in person, still engaged in the production of semiconductor devices for people is of great significance. In this paper, the basic theory of silicon cleaning process method and common techniques are discussed in detail, at the same time for some commonly used cleaning solution for shallow, and the importance of silicon cleaning and development prospects were simply discusses. At last, the paper introduces the latest progress of the cleaning process. Keywords：Silicon wafer; Cleaning; Wet chemical cleaning; Dry cleaning technology; The latest progress of the 目 录 TOC \o 1-3 \h \z \u 摘 要 I Abstract II 第1章 硅片清洗的基本理论 1 1.1 硅面的表面状态与洁净度问题 1 1.2 吸附理论 2 1.3硅片表面玷污杂质的来源和分类3 1.4