电子束蒸发二氧化硅薄膜的制备及其驻极体特性研究.PDF

The 7th National Conference on Functional Materials and Applications Synthesis and Electret Properties of SiO Thin Film 2 Deposited by Electron Beam Evaporation 1 2 2 Tian-liang Hao , Gang-jin Chen , Hui-ming Xiao 1Analysis and Measurement Center of Zhejiang University, Zhejiang, Hangzhou, P.R.C., 310028 2 Material Physical Institute of Hangzhou Electronic Science and Technology University, Zhejiang, Hangzhou, P.R.C., 310018 Email: cgjin@hdu.edu.cn Abstract: Devices made of SiO2 thin film electrets have received significant attention, due to the compatibility of device-making to the standard lithography and microelectronmechanical process, thus the automatic produce of the integrated and miniaturized devices can be easily achieved. In this work, SiO2 thin films were deposited on ITO glass substrates by electron beam evaporation method. The influence of the growth rate, the substrate temperature and the postannealling process on the film properties was studied. It was found that compact SiO2 thin film with smooth surface can be obtained under optimal synthesis conditions, and the postannealling process with plasma can increase the initial surface potential but cannot improve the charge stability. By comparing surface morphologies of the SiO2 thin films grown by electron beam evaporation and plasma enhanced chemical vapor deposition, it is suggested that the charge stability may be correlated with the sample surface roughness. Key words: electron beam evaporation; SiO2 thin film; growth technique; electret property