NP2N10MR_E/南麟原厂规格书.pdf

NP2N10MR 100V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2N10MR uses advanced trench technology D to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM G applications. General Features S  VDS =100V ，ID =2A Marking and pin assignment RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.5V SOT-23-3L  High power and current handing capability (TOP VIEW)  Lead free product is acquired 5 D  Surface mount package 0 3 3 Application 3 1  PWM applications 5 NP102  Load switch 3 Package 2 1 2 HF Pb 8 G S  SOT-23-3L 3 1 : Ordering Information l l a Part Number Storage Temperature Package Devices Per Reel C NP2N10MR-G -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) parameter symbol limit unit Drain-sour