场效应管规格书AP8810TS 12A 20V TSSOP-8.pdfVIP

AP8810TS 20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The AP8810TS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES V = 20V,I = 7A DS D RDS(ON) 28mΩ @ VGS=2.5V RDS(ON) 26mΩ @ VGS=3.1V RDS(ON) 22mΩ @ VGS=4V RDS(ON) 20mΩ @ VGS=4.5V ESD Rating ：2000V HBM Application Battery protection Load switch Power management Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP8810TS TSSOP-8 AP8810E XXX YYYY 5000 ABSOLUTE MAXIMUM RATINGS(TA=25 ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V I 7 A D Drain Current-Continuous@ Current-Pulsed (Note 1) IDM 25 A Maximum Power Dissipation PD 1.5