场效应管规格书AP8809CF 9.6A 20V DFN2x3-6.pdf

AP8809CF 20V N+N-Channel Enhancement Mode MOSFET General Description The AP8809CF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. General Features V = 20V I = 9.5A DS D RDS(ON) 9mΩ @ VGS=4.5V RDS(ON) 13.5mΩ @ VGS=2.5V ESD=2KV HBM Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP8809CF DFN2*3-6 8809E 5000 Absolute Maximum Ratings (T =25℃unless otherwise noted) A Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 1 I @T =25℃ Continuous Drain Current, VGS @ 4.5V 9.5 A D A 1 I @T =70℃ Continuous Drain Current, VGS @ 4.5V 7.6 A D