4H 和 6H-SiC的介电常数.pdf

Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si Stefan Zollner, J. G. Chen, Erika Duda, T. Wetteroth, S. R. Wilson et al. Citation: J. Appl. Phys. 85, 8353 (1999); doi: 10.1063/1.370682 View online: /10.1063/1.370682 View Table of Contents: /resource/1/JAPIAU/v85/i12 Published by the American Institute of Physics. Related Articles Strain control of orbital polarization and correlated metal-insulator transition in La2CoMnO6 from first principles Appl. Phys. Lett. 99, 202110 (2011) The role of plasmons and interband transitions in the color of AuAl2, AuIn2, and AuGa2 Appl. Phys. Lett. 99, 111908 (2011) Metal-insulator transition in low dimensional La0.75Sr0.25VO3 thin films Appl. Phys. Lett. 99, 112111 (2011) Simple model of bulk and surface excitation effects to inelastic scattering in low-energy electron beam irradiation of multi-walled carbon nanotubes J. Appl. Phys. 110, 054304 (2011) Control of the plasmon in a single layer graphene by charge doping Appl. Phys. Lett. 99, 082110 (2011) Additional information on J. Appl. Phys. Journal Homepage: / Journal Information: /about/about_the_journal Top downloads: /features/most_downloaded Information for Authors: /authors Downloaded 19 Nov 2011 to 3. Redistribution subject to AIP license or copyright; see /about/rights_and_permissions JOURNAL OF APPLIED PHYSICS VOLUME 85, NUMBER 12 15 JUNE 1999 Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si Stefan Zollner,a) J. G. Chen, and Erika Duda Motorola SPS, Center for Integrated Systems Development, Process and Materials Characterization Laboratory, MD M360, 2200 West Broadway Road, Mesa, Arizona 85202 T. Wetteroth and S. R. Wilson Motorola SPS, Materials Technology Laboratory, 2100 Ea