半导体英文课件Device Fabrication Technology.ppt

Slide 3-* 3.7 Thin-Film Deposition Three Kinds of Solid Crystalline Polycrystalline Example: Silicon wafer Thin film of Si or metal. Thin film of SiO2 or Si3N4. Amorphous Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 3-* 3.7 Thin-Film Deposition Advanced MOSFET gate dielectric Poly-Si film for transistor gates Metal layers for interconnects Dielectric between metal layers Encapsulation of IC Examples of thin films in integrated circuits Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 3-* 3.7.1 Sputtering Schematic Illustration of Sputtering Process Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 3-* 3.7.2 Chemical Vapor Deposition (CVD) Thin film is formed from gas phase components. Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 3-* Some Chemical Reactions of CVD Poly-Si : SiH4 (g) Si (s) + 2H2 (g) Si3N4 : 3SiH2Cl2 (g)+4NH3 (g) Si3N4 (s)+6HCl(g)+6H2 (g) SiO2 : SiH4 (g) + O2 (g) SiO2 (s) + 2H2 (g) or SiH2Cl2 (g)+2N2O (g) SiO2 (s)+2HCl (g)+2N2 (g) Modern Semiconductor Devices for Integrated Circuits (C. Hu) * * * * * * * * * Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 3-* Chapter 3 Device Fabrication Technology About 1020 transistors (or 10 billion for every person in the world) are manufactured every year. VLSI (Very Large Scale Integration) ULSI (Ultra Large Scale Integration) GSI (Giga-Scale Integration) Variations of this versatile technology are used for flat-panel displays, micro-electro-mechanical systems (MEMS), and chips for DNA screening... Slide 3-* 3.1 Introduction to Device Fabrication Oxidation Lithography Etching Ion Implantation Annealing Diffusion Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 3-* 3.2 Oxidation of Silicon Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 3-* 3.2