场效应MOS管AK0203S参数10A100V封装SOP-8.pdf

AK0203S AK N-Channel Enhancement Mode Power MOSFET Description The AK0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =200V,I =3.9A DS D RDS(ON) 79mΩ @ VGS=10V （Typ ：56mΩ） Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 0203 AK0203S SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3.9 A Drain Current-Continuous(T =100℃) I (100℃) 2.8 A C D Pulsed Drain Current IDM