场效应MOS管AK2321A参数-4.5A-20V封装SOT-23.pdf

AK2321A AK P-Channel Enhancement Mode Power MOSFET Description D The AK2321A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram ● V = -20V,I = -4.5A DS D RDS(ON) 70mΩ @ VGS=-1.8V RDS(ON) 50mΩ @ VGS=-2.5V RDS(ON) 40mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PA switch ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2321A AK2321A SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current -Continuous ID -4.5 A Drain Current -Pulsed (Note 1)