场效应MOS管AK2301A参数-3A-15V封装SOT-23.pdf

AK2301A AK P-Channel Enhancement Mode Power MOSFET Description The AK2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● V = -15V,I = -3.0A DS D Schematic diagram RDS(ON) 70mΩ @ VGS=-2.5V RDS(ON) 80mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2301A AK2301A SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -15 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -3.0 A Drain Current -Pulsed (Note 1) IDM -15 A Maximum Power Dissipation PD 1 W Operating Junction and Storage Temperature Range TJ ,TSTG