超结MOS管AK60R1K2参数4A650V封装TO-220.pdf

AK60R1K2 N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 1200 mΩ gate charge. This super junction MOSFET fits the industry’s ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction （PFC） ● Switched mode power supplies(SMPS) Schematic diagram ● Uninterruptible Power Supply （UPS） Package Marking And Ordering Information Device Device Package Marking AK60R1K2 TO-220 AK60R1K2 AK60R1K2D TO-263 AK60R1K2D AK60R1K2F TO-220F AK60R1K2F Table 1. Absolute Maximum Ratings (T =25℃) C AK60R1K2 Parameter Symbol AK60R1K2F Unit AK60R1K2D Drain-Source Voltage (VGS=0V ） VDS 600 V Gate-Source Voltage (VDS=0V) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC)