超结MOS管AK70R900I参数5A700V封装TO-251.pdf

AK70R900IAK70R900K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 840 mΩ gate charge. This super junction MOSFET fits the industry’s ID 5 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction （PFC） ● Switched mode power supplies(SMPS) Schematic diagram ● Uninterruptible Power Supply （UPS） Package Marking And Ordering Information Device Device Package Marking AK70R900I TO-251 AK70R900I AK70R900K TO-252 AK70R900K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Value Unit Drain-Source Voltage (VGS=0V ） VDS 700 V Gate-Source Voltage (VDS=0V) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 5 A Continuous Drain Current at Tc=100°C ID (DC) 3 A Pulsed drain current (Note 1)