超结MOS管AKP01T15WD参数150A100V封装TO-220.pdf

AKP01T15WD AK N-Channel Super Trench Power MOSFET Description The AKP01T15WD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching and synchronous rectification. Schematic diagram General Features ● V =100V,I =150A DS D RDS(ON) 3.6mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter 100% UIS TESTED! ● Ideal for high-frequency switching and synchronous 100% ∆Vds TESTED! rectification Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AKP01T15WD AKP01T15WD TO-263T-2L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (Silicon Limited) ID 170