NBTI的研究进展和改善途径.pdfVIP

NBTI的研究进展和改善途径 作者： 尹彬锋 ， 周柯 ， YIN Bin-Feng ， ZHOU Ke 作者单位： 中芯国际集成电路制造(上海)有限公司, 上海,201203 刊名： 中国集成电路 英文刊名： CHINA INTEGRATED CIRCULT 年，卷(期) ： 2009,18(1) 参考文献(21条) 1. Alam M.A A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs 2003 2. Schroder D.K;Babcock J.A Negative bias temperature instability:Road to cross in deep submicron silicon semiconductor manufacturing [ 外文期刊] 2003(01) 3. Cheng K;Hess K;Lyding J.W A new technique to quantify deuterium passivation of interface traps in MOS devices[ 外文期刊] 2001(05) 4. Heinrigs W;Reisinger H;Gustin W Consideration of recovery effects during NBTI measurements for accurate lifetime predictions of state-of-the-art pMOSFETs 2007 5. Denais M;Bravaix A;Huard V;ea al On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET s 2004 6. Reisinger H;Brunner U;Heinrigs W A Comparison of Fast Methods for Measuring NBTI Degradation 2007(04) 7. Huard V;Parthasarathy C.R;Guerin C Physical modeling of negative bias temperature instability for predictive extrapolation 2006 8. Yang T;Li M.F;Shen C Fast and Slow Dynamic NBTI components in p-MOSFET with SiON dielectric 2005 9. Cho S.M;Lee J.H;Chang M High Pressure Deuterium Annealing Effect on Nano-Scale Strained CMOS Devices 2007 10. Irisawa T;Numata T;Toyada E Physical Understanding of Strain Effects on Gate Oxide Reliability of MOSFETs 2007 11. Shickova A;Kaczer B;Verheyen P Negligible Effect of Process-Induced Strain on Intrinsic NBTI Behavior [ 外文期刊] 2007(03) 12. Chung S.S;Huang D.C;Tsai Y.J New Observations on the Uniaxial and Biaxial Strain-Induced Hot Carrier and NBTI Reliabilities for 65nm Node CMOS Devices and Beyond 13.Yamamoto T;Uwasawa K;Mogami TBias temperature instability in scaled p+ polysilicon gate p- MOSFETs 199