NP2307DR_E上海南麟电子.pdf

NP2307DR 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2307DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  V =-20V ，I =-8A DS D RDS(ON)(Typ.)=15.6mΩ @VGS=-4.5V Marking and pin assignment RDS(ON)(Typ.)=20mΩ @VGS=-2.5V DFN2*2-6L-B  High power and current handing capability Thickness 0.55mm ） （  Lead free product is acquired  Surface mount package Application  PWM applications  Load switch Package  DFN2*2-6L-B NPNatlinear Power HF Pb 2307NP2307 Ordering Information Part Number Storage Temperature Package Devices Per Reel NP2307DR-G -55°C to +150°C DFN2*2-6L-B 4000 Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±12 V TC=25℃ -8a T =70℃