HYG042N10NS1B_N沟道100V160A产品规格书.pdf

HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications  Power Switching application  DC-DC Converters N-Channel MOSFET Ordering and Marking Information Package Code P B P :TO-220FB-3L B:TO-263-2L G042N10 G042N10 Date Code XYMXXXXXX XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi- Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. V1.0 1 HYG042N10NS1P/B Absolute Maximum Ratings Symbol