HYG023N04LS1B华羿微Nmos规格书.pdf

HYG023N04LS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description  40V/170A RDS(ON) 2.1mΩ(typ.)@VGS 10V RDS(ON) 2.9mΩ(typ.)@VGS 4.5V  100%Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHSCompliant) TO-220FB-3L TO-263-2L Applications  PowerManagementforDC/DC N-Channel MOSFET Ordering and Marking Information Package Code P B P :TO-220FB-3L B :TO-263-2L G023N04 G023N04 Date Code XYMXXXXXX XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nationfinish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- mentsof IPC/JEDECJ-STD-020for MSLclassificationat lead-free peak reflow temperature. HUAYIdefines “Green” to mean lead-free (RoHScompliant)and halogenfree (BrorCldoes not exceed 900ppm byweight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes,corrections,enhancements, modifications,and improvements to this pr -oduct and/orto this document at any timewithout notice. V1.0 1 HYG023N04LS1P/B Absolute Maximum Ratings Symbol Parameter