SPP3413 P-Channel Enhancement Mode MOSFET handbook说明书用户手册.PDF

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好! SPP3413 P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP3413 is the P-Channel logic enhancement mode Power Management in Note book power field effect transistors are produced using high cell Portable Equipment density , DMOS trench technology. Battery Powered System DC/DC Converter This high density process is especially tailored to Load Switch minimize on-state resistance. DSC These devices are particularly suited for low voltage LCD Display inverter application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES PIN CONFIGURATION(SOT-23-3L) -20V/-3.4A,RDS(ON)= 95mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V -20V/-1.0A,RDS(ON)=210mΩ@VGS=-1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING 2006/04/12 Ver.4 Page 1 SPP3413 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G