JXP4606BSRG_E靖芯-恒佳盛原厂一级代理.pdf

靖芯 JXP4606BSRG STBCHIP 20V N And P-Channel Enhancement MOSFET DESCRIPTION SCHEMATIC DIAGRAM The JXP4606BSRG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. GENERAL FEATURES  N-Channel VDS =20V，ID =5A RDS(ON)(Typ.)=35mΩ @VGS=2.5V RDS(ON)(Typ.)=25mΩ @VGS=4.5V PIN ASSIGNMENT  P-Channel VDS =-20V，ID =-5A SOP-8 RDS(ON)(Typ.)=65mΩ @VGS=-2.5V Top View Bottom View RDS(ON)(Typ.)=55mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package APPLICATION  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply XXYY: XX—years code，YY—weeks code ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP4606BSRG -55°C to +150°C SOP-8 4606B/XXYY 4000 ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) limit parameter symbol unit N P Drain-source voltage VDS 20 -20 V Gate-source voltage VGS