JXP8205ITRG_E靖芯科技 恒佳盛电子一级代理商.pdf

DESCRIPTION SCHEMATIC DIAGRAM The JXP8205ITRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  VDS =20V，ID =5A RDS(ON)(Typ.)=24mΩ @VGS=2.5V RDS(ON)(Typ.)=18mΩ @VGS=4.5V PIN ASSIGNMENT  High power and current handing capability  Lead free product is acquired TSSOP-8L  Surface mount package (Topview) APPLICATION D1 1 8 D2  PWM applications S1 2 8205i 7 S2  Load switch S1 3 YYMM 6 S2 PACKAGE G1 4 5 G2  TSSOP-8L Note: YYMM is Date code ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP8205ITRG -55°C to +150°C TSSOP-8L 8205i/YYMM 4000 ABSOLUTE MAXIMUM RATINGS (T =25℃ unless otherwise noted) A parameter symbol limit unit Drain-source voltage VDS 20 V Gate-source voltage VGS ±12 V T =25°C 5.0 A Continuous drain current (T = 1